| 1 |
Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors
Yang C, Zhang FL, Yin ZP, Su Y, Qin FW, Wang DJ
Applied Surface Science, 488, 293, 2019 |
| 2 |
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK
Current Applied Physics, 18(8), 919, 2018 |
| 3 |
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK
Current Applied Physics, 18(8), 919, 2018 |
| 4 |
Effects of post-deposition annealing on sputtered SiO2/4H-SiC metal-oxide-semiconductor
Lee S, Kim YS, Kang HJ, Kim H, Ha MW, Kim HJ
Solid-State Electronics, 139, 115, 2018 |
| 5 |
Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics
Hourdakis E, Casanova A, Larrieu G, Nassiopoulou AG
Solid-State Electronics, 143, 77, 2018 |
| 6 |
Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer
Wang Q, Cheng XH, Zheng L, Ye PY, Li ML, Shen LY, Li JJ, Zhang DL, Gu ZY, Yu YH
Applied Surface Science, 410, 326, 2017 |
| 7 |
Applicability of MOS structures in monitoring catalytic properties, as exemplified for monolayer-iron-oxide-coated porous platinum films
Fashandi H, Soldemo M, Weissenrieder J, Gothelid M, Eriksson J, Eklund P, Spetz AL, Andersson M
Journal of Catalysis, 344, 583, 2016 |
| 8 |
Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation
Li XF, Liu XJ, Cao YQ, Li AD, Li H, Wu D
Applied Surface Science, 264, 783, 2013 |
| 9 |
Growth, dielectric properties, and memory device applications of ZrO2 thin films
Panda D, Tseng TY
Thin Solid Films, 531, 1, 2013 |
| 10 |
Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric
Bethge O, Henkel C, Abermann S, Pozzovivo G, Stoeger-Pollach M, Werner WSM, Smoliner J, Bertagnolli E
Applied Surface Science, 258(8), 3444, 2012 |
