화학공학소재연구정보센터
검색결과 : 653건
No. Article
1 Negative quantum capacitance effect from Bi2Te1.5Se1.5 with frequency dependent capacitance of polyvinyl alcohol (PVA) film in MOS structure
Choi H, Park J, Shim JW, Shin C
Applied Surface Science, 463, 1046, 2019
2 Gas sensing characteristics of the FET-type gas sensor having inkjet-printed WS2 sensing layer
Jeong Y, Shin J, Hong Y, Wu ML, Hong S, Kwon KC, Choi S, Lee T, Jang HW, Lee JH
Solid-State Electronics, 153, 27, 2019
3 Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
Ren N, Hu H, Lyu XF, Wu JP, Xu HY, Li RG, Zuo Z, Wang K, Sheng K
Solid-State Electronics, 152, 33, 2019
4 Low frequency noise investigation of n-MOSFET single cells for memory applications
Ioannidis EG, Leisenberger FP, Enichlmair H
Solid-State Electronics, 151, 36, 2019
5 Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure
Doundoulakis G, Adikimenakis A, Stavrinidis A, Tsagaraki K, Androulidaki M, Deligeorgis G, Konstantinidis G, Georgakilas A
Solid-State Electronics, 158, 1, 2019
6 DC and RF performances of InAs FinFET and GAA MOSFET on insulator
Cheng Q, Shariar K, Khandelwal S, Zeng YP
Solid-State Electronics, 158, 11, 2019
7 Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
Kutsuki K, Watanabe Y, Yamashita Y, Soejima N, Kataoka K, Onishi T, Yamamoto K, Fujiwara H
Solid-State Electronics, 157, 12, 2019
8 Synaptic device using a floating fin-body MOSFET with memory functionality for neural network
Woo SY, Choi KB, Lim S, Lee ST, Kim CH, Kang WM, Kwon D, Bae JH, Park BG, Lee JH
Solid-State Electronics, 156, 23, 2019
9 Feasibility of plasmonic circuits for on-chip interconnects
Fukuda M, Tonooka Y, Inoue T, Ota M
Solid-State Electronics, 156, 33, 2019
10 A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
Donetti L, Sampedro C, Ruiz FG, Godoy A, Gamiz F
Solid-State Electronics, 159, 19, 2019