| 1 |
Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells
Miyoshi M, Tsutsumi T, Kabata T, Mori T, Egawa T
Solid-State Electronics, 129, 29, 2017 |
| 2 |
Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties
Gao QX, Liu R, Xiao HD, Cao DZ, Liu JQ, Ma J
Applied Surface Science, 387, 406, 2016 |
| 3 |
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates
Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM
Journal of Crystal Growth, 387, 16, 2014 |
| 4 |
Electrical characterization of the A(III)B(V)-N heterostructures by capacitance methods
Stuchlikova L, Harmatha L, Petrus M, Rybar J, Sebok J, Sciana B, Radziewicz D, Pucicki D, Tlaczala M, Kosa A, Benko P, Kovac J, Juhasz P
Applied Surface Science, 269, 175, 2013 |
| 5 |
Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
Feng ZC, Zhu LH, Kuo TW, Wu CY, Tsai HL, Liu BL, Yang JR
Thin Solid Films, 529, 269, 2013 |
| 6 |
Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction
Bonanno PL, Gautier S, El Gmili Y, Moudakir T, Sirenko AA, Kazimirov A, Cai ZH, Martin J, Goh WH, Martinez A, Ramdane A, Le Gratiet L, Maloufi N, Assouar MB, Ougazzaden A
Thin Solid Films, 541, 46, 2013 |
| 7 |
Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure
Chang LC, Kuo CH, Kuo CW
Solid-State Electronics, 56(1), 8, 2011 |
| 8 |
A SiGe/Si multiple quantum well avalanche photodetector
Sun PH, Chang ST, Chen YC, Lin HC
Solid-State Electronics, 54(10), 1216, 2010 |
| 9 |
1.3 mu m AlGaInAs/AlGaInAs strain-compensated multiple-quantumwell index-coupled distribution feedback laser diodes
Lei PH
Solid-State Electronics, 51(6), 925, 2007 |
| 10 |
Growth and carrier dynamics in type II band alignment GaInAsSb/GaSb quantum well structure
Edamura T, Kan H
Thin Solid Films, 515(18), 7286, 2007 |
