검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy Podpirka AA, Twigg ME, Tischler JG, Magno R, Bennett BR Journal of Crystal Growth, 404, 122, 2014 |
| 2 |
High-frequency, 6.2 angstrom pN heterojunction diodes Champlain JG, Magno R, Park D, Newman HS, Boos JB Solid-State Electronics, 67(1), 105, 2012 |
| 3 |
InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material Champlain JG, Magno R, Ancona M, Newman HS, Boos JB Solid-State Electronics, 52(11), 1829, 2008 |
| 4 |
Optical characterization of In0.27Ga0.73Sb and ln(x)Al(1-x)As(y)Sb(1-y) pitaxial layers for development of 6.2-angstrom-based heterojunction bipolar transistors Glaser ER, Magno R, Shanabrook BV, Tischler JG Journal of Vacuum Science & Technology B, 24(3), 1604, 2006 |
| 5 |
Narrow band gap InGaSb, InAlAsSb alloys for electronic devices Magno R, Glaser ER, Tinkham BP, Champlain JG, Boos JB, Ancona MG, Campbell PM Journal of Vacuum Science & Technology B, 24(3), 1622, 2006 |
| 6 |
Low resistance, unannealed, Ohmic contacts to p-type In0.27Ga0.73Sb Champlain JG, Magno R, Boos JB Journal of Vacuum Science & Technology B, 24(5), 2388, 2006 |
| 7 |
Growth of InAsSb-channel high electron mobility transistor structures Tinkham BP, Bennett BR, Magno R, Shanabrook BV, Boos JB Journal of Vacuum Science & Technology B, 23(4), 1441, 2005 |
| 8 |
Antimonide-based compound semiconductors for electronic devices: A review Bennett BR, Magno R, Boos JB, Kruppa W, Ancona MG Solid-State Electronics, 49(12), 1875, 2005 |
| 9 |
Controlled n-type doping of antimonides and arsenides using GaTe Bennett BR, Magno R, Papanicolaou N Journal of Crystal Growth, 251(1-4), 532, 2003 |
| 10 |
Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system Bennett BR, Bracker AS, Magno R, Boos JB, Bass R, Park D Journal of Vacuum Science & Technology B, 18(3), 1650, 2000 |