검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Thermally Crosslinkable and Chemically Modifiable Aromatic Polyesters Possessing Pendant Propargyloxy Groups Verma S, Maher DM, Nagane SS, Tawade BV, Wadgaonkar PP Journal of Polymer Science Part A: Polymer Chemistry, 57(5), 588, 2019 |
| 2 |
A new cardo bisphenol monomer containing pendant azido group and the resulting aromatic polyesters Maher DM, Nagane SS, Jadhav UA, Salunkhe PH, Tawade BV, Wadgaonkar PP Journal of Polymer Science Part A: Polymer Chemistry, 57(14), 1516, 2019 |
| 3 |
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon Chambers JJ, Busch BW, Schulte WH, Gustafsson T, Garfunkel E, Wang S, Maher DM, Klein TM, Parsons GN Applied Surface Science, 181(1-2), 78, 2001 |
| 4 |
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering Ban I, Ozturk MC, Misra V, Wortman JJ, Venables D, Maher DM Journal of the Electrochemical Society, 146(3), 1189, 1999 |
| 5 |
Quality of selective silicon epitaxial films deposited using disilane and chlorine O'Neil PA, Ozturk MC, Batchelor AD, Xu MM, Maher DM Journal of the Electrochemical Society, 146(6), 2337, 1999 |
| 6 |
Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine O'Neil PA, Ozturk MC, Batchelor AD, Xu MM, Maher DM Journal of the Electrochemical Society, 146(6), 2344, 1999 |
| 7 |
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2 O'Neil PA, Ozturk MC, Batchelor AD, Venables D, Xu MM, Maher DM Journal of the Electrochemical Society, 146(8), 3070, 1999 |
| 8 |
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic O'Neil PA, Ozturk MC, Batchelor AD, Venables D, Maher DM Journal of the Electrochemical Society, 146(8), 3079, 1999 |
| 9 |
Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces Wolfe DM, Hinds BJ, Wang F, Lucovsky G, Ward BL, Xu M, Nemanich RJ, Maher DM Journal of Vacuum Science & Technology A, 17(4), 2170, 1999 |
| 10 |
Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si Neogi SS, Venables D, Na ZY, Maher DM Journal of Vacuum Science & Technology B, 16(1), 471, 1998 |