화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers
Yang Y, Guo JQ, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D
Journal of Crystal Growth, 452, 35, 2016
2 Development and characterization of Au-YSZ surface plasmon resonance based sensing materials: High temperature detection of CO
Sirinakis G, Siddique R, Manning I, Rogers PH, Carpenter MA
Journal of Physical Chemistry B, 110(27), 13508, 2006