검색결과 : 62건
| No. | Article |
|---|---|
| 1 |
Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters von den Driesch N, Stange D, Rainko D, Breuer U, Capellini G, Hartmann JM, Sigg H, Mantl S, Grutzmacher D, Buca D Solid-State Electronics, 155, 139, 2019 |
| 2 |
Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX Han QH, Aleksa P, Tromm TCU, Schubert J, Mantl S, Zhao QT Solid-State Electronics, 159, 71, 2019 |
| 3 |
Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents Narimani K, Glass S, Bernardy P, von den Driesch N, Zhao QT, Mantl S Solid-State Electronics, 143, 62, 2018 |
| 4 |
Process modules for GeSn nanoelectronics with high Sn-contents Schulte-Braucks C, Glass S, Hofmann E, Stange D, von den Driesch N, Hartmann JM, Ikonic Z, Zhao QT, Buca D, Mantl S Solid-State Electronics, 128, 54, 2017 |
| 5 |
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages Luong GV, Strangio S, Tiedemannn A, Lenk S, Trellenkamp S, Bourdelle KK, Zhao QT, Mantl S Solid-State Electronics, 115, 152, 2016 |
| 6 |
Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3% Luong GV, Knoll L, Blaeser S, Suess MJ, Sigg H, Schafer A, Trellenkamp S, Bourdelle KK, Buca D, Zhao QT, Mantl S Solid-State Electronics, 108, 19, 2015 |
| 7 |
Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity Richter S, Trellenkamp S, Schafer A, Hartmann JM, Bourdelle KK, Zhao QT, Mantl S Solid-State Electronics, 108, 97, 2015 |
| 8 |
Experimental demonstration of improved analog device performance of nanowire-TFETs Schulte-Braucks C, Richter S, Knoll L, Selmi L, Zhao QT, Mantl S Solid-State Electronics, 113, 179, 2015 |
| 9 |
Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Bourdelle KK, Hartmann JM, Zhao QT, Mantl S Solid-State Electronics, 97, 76, 2014 |
| 10 |
Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Wirths S, Blaeser S, Buca D, Bourdelle KK, Zhao QT, Mantl S Solid-State Electronics, 98, 32, 2014 |