| 1 |
Towards reproducible scanning capacitance microscope image interpretation
Kopanski JJ, Marchiando JF, Rennex BG, Simons D, Chau Q
Journal of Vacuum Science & Technology B, 22(1), 399, 2004 |
| 2 |
On calculating scanning capacitance microscopy data for a dopant profile in semiconductors
Marchiando JF, Kopanski JJ
Journal of Vacuum Science & Technology B, 22(1), 411, 2004 |
| 3 |
Comparison of experimental and theoretical scanning capacitance microscope signals and their impact on the accuracy of determined two-dimensional carrier profiles
Kopanski JJ, Marchiando JF, Rennex BG
Journal of Vacuum Science & Technology B, 20(5), 2101, 2002 |
| 4 |
Carrier concentration dependence of the scanning capacitance microscopy signal in the vicinity of p-n junctions
Kopanski JJ, Marchiando JF, Rennex BG
Journal of Vacuum Science & Technology B, 18(1), 409, 2000 |
| 5 |
Limitations of the calibration curve method for determining dopant profiles from scanning capacitance microscope measurements
Marchiando JF, Kopanski JJ, Albers J
Journal of Vacuum Science & Technology B, 18(1), 414, 2000 |
| 6 |
Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions
Kopanski JJ, Marchiando JF, Berning DW, Alvis R, Smith HE
Journal of Vacuum Science & Technology B, 16(1), 339, 1998 |
| 7 |
Model database for determining dopant profiles from scanning capacitance microscope measurements
Marchiando JF, Kopanski JJ, Lowney JR
Journal of Vacuum Science & Technology B, 16(1), 463, 1998 |
| 8 |
Scanning Capacitance Microscopy Measurements and Modeling - Progress Towards Dopant Profiling of Silicon
Kopanski JJ, Marchiando JF, Lowney JR
Journal of Vacuum Science & Technology B, 14(1), 242, 1996 |
