화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Terahertz response of a field-effect transistor loaded with a reactive component
Mammeri AM, Mahi FZ, Marinchio H, Palermo C, Varani L
Solid-State Electronics, 146, 21, 2018
2 Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors
Starikov E, Shiktorov P, Gruzinskis V, Marinchio H, Palermo C, Varani L
Solid-State Electronics, 114, 141, 2015
3 Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors
Millithaler JF, Pousset J, Reggiani L, Marinchio H, Varani L, Palermo C, Ziade P, Mateos J, Gonzalez T, Perez S
Solid-State Electronics, 56(1), 116, 2011