| 1 |
Ion-enhanced etching of Si(100) with molecular chlorine: Neutral and ionic product yields as a function of ion kinetic energy and molecular chlorine flux
Materer N, Goodman RS, Leone SR
Journal of Physical Chemistry B, 104(14), 3261, 2000 |
| 2 |
Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl-2
Materer N, Goodman RS, Leone SR
Journal of Vacuum Science & Technology B, 18(1), 191, 2000 |
| 3 |
Ion-enhanced etching of Si(100) with molecular chlorine: Reaction mechanisms and product yields
Goodman RS, Materer N, Leone SR
Journal of Vacuum Science & Technology A, 17(6), 3340, 1999 |
| 4 |
Laser Single-Photon Ionization Mass-Spectrometry Measurements of Sicl and Sicl2 During Thermal Etching of Si(100)
Materer N, Goodman RS, Leone SR
Journal of Vacuum Science & Technology A, 15(4), 2134, 1997 |
| 5 |
Ar, N-2 and Cl-2 Electron-Cyclotron-Resonance Plasmas Measured by Time-of-Flight Analysis - Neutral Kinetic Energies and Source Gas Cracking
Goodman RS, Materer N, Leone SR
Journal of Vacuum Science & Technology B, 15(4), 971, 1997 |
| 6 |
Molecular-Surface Structure of a Low-Temperature Ice Ih(0001) Crystal
Materer N, Starke U, Barbieri A, Vanhove MA, Somorjai GA, Kroes GJ, Minot C
Journal of Physical Chemistry, 99(17), 6267, 1995 |
