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No. | Article |
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1 |
Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors Mandal A, Ghadi H, Mathur KL, Basu A, Subrahmanyam NBV, Singh P, Chakrabarti S Materials Research Bulletin, 48(8), 2886, 2013 |