검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films Yamashita T, Naijo T, Matsuhata H, Momose K, Osawa H, Okumura H Journal of Crystal Growth, 433, 97, 2016 |
| 2 |
Structural analysis of the 3C vertical bar 4H boundaries formed on prismatic planes in 4H-SiC epitaxial films Yamashita T, Matsuhata H, Naijo T, Momose K, Osawa H Journal of Crystal Growth, 455, 172, 2016 |
| 3 |
Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy Yamashita T, Matsuhata H, Sekiguchi T, Momose K, Osawa H, Kitabatake M Journal of Crystal Growth, 416, 142, 2015 |
| 4 |
Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals Ohtani N, Ohshige C, Katsuno M, Fujimoto T, Sato S, Tsuge H, Ohashi W, Yano T, Matsuhata H, Kitabatake M Journal of Crystal Growth, 386, 9, 2014 |
| 5 |
Defect formation during the initial stage of physical vapor transport growth of 4H-SiC in the [11(2)over-bar0] direction Ohshige C, Takahashi T, Ohtani N, Katsuno M, Fujimoto T, Sato S, Tsuge H, Yano T, Matsuhata H, Kitabatake M Journal of Crystal Growth, 408, 1, 2014 |
| 6 |
Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBE Shen XQ, Furuta K, Nakamura N, Matsuhata H, Shimizu M, Okumura H Journal of Crystal Growth, 301, 404, 2007 |
| 7 |
Alignment of Ge three-dimensional islands on faceted Si(001) surfaces Sakamoto K, Matsuhata H, Tanner MO, Wang DW, Wang KL Thin Solid Films, 321(1-2), 55, 1998 |