화학공학소재연구정보센터
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No. Article
1 Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications
Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK
Journal of Vacuum Science & Technology B, 25(3), 1098, 2007
2 Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)(3)
Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM
Journal of Vacuum Science & Technology B, 24(3), 1572, 2006
3 Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems
Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, Holmes AL, Mattord TJ
Journal of Vacuum Science & Technology A, 23(6), 1737, 2005
4 Inert gas maintenance for molecular-beam epitaxy systems
Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, Holmes AL, Mattord TJ
Journal of Vacuum Science & Technology B, 23(3), 1257, 2005
5 Construction of a variable aperture cell for source flux control in a molecular-beam epitaxy environment
Mattord TJ, Oye MM, Gotthold D, Hansing C, Holmes AL, Streetman BG
Journal of Vacuum Science & Technology A, 22(3), 735, 2004