검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Epitaxial growth with monosilane gas on a 400 mm diameter silicon wafer Imai M, Nakahara S, Inoue K, Mayusumi M, Gima S Electrochemical and Solid State Letters, 4(3), G23, 2001 |
| 2 |
Surface imperfection behavior during the SiH4 epitaxial growth process Imai M, Inoue K, Mayusumi M, Gima S, Nakahara S Journal of the Electrochemical Society, 147(4), 1568, 2000 |
| 3 |
A direct approach for evaluating the thermal condition of a silicon substrate under infrared rays and specular reflectors Habuka H, Otsuka T, Mayusumi M, Shimada M, Okuyama K Journal of the Electrochemical Society, 146(2), 713, 1999 |
| 4 |
Study of surface treatment of silicon wafer using small angle incident X-ray photoelectron spectroscopy Mayusumi M, Imai M, Takahashi J, Kawada K, Ohmi T Journal of the Electrochemical Society, 146(6), 2235, 1999 |
| 5 |
Effect of Transport Phenomena on Boron Concentration Profiles in Silicon Epitaxial Wafers Habuka H, Mayusumi M, Tsunoda H, Katayama M Journal of the Electrochemical Society, 143(2), 677, 1996 |
| 6 |
Roughness of Silicon Surface Heated in Hydrogen Ambient Habuka H, Tsunoda H, Mayusumi M, Tate N, Katayama M Journal of the Electrochemical Society, 142(9), 3092, 1995 |