검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
The effect of surface cleaning on current collapse in AlGaN/GaN HEMTs Bardwell JA, Haffouz S, McKinnon WR, Storey C, Tang H, Sproule GI, Roth D, Wang R Electrochemical and Solid State Letters, 10(2), H46, 2007 |
| 2 |
Electrical isolation of electrodes with submicron separation in a digital optical switch Ng S, Abdalla S, Syrett B, Barrios P, McKinnon WR, Delage A, Golub I, Janz S, Lapointe J Journal of Vacuum Science & Technology A, 24(3), 807, 2006 |
| 3 |
Temperature distribution and heating in multiple emitter SiGeHBTs McAlister SP, McKinnon WR, Kovacic SJ, Lafontaine H Journal of Vacuum Science & Technology A, 22(3), 1031, 2004 |
| 4 |
Self-heating in multi-emitter SiGeHBTs McAlister SP, McKinnon WR, Kovacic SJ, Lafontaine H Solid-State Electronics, 48(10-11), 2001, 2004 |
| 5 |
Current gain degradation in SiGeHBTs by hot carriers Gill CR, McAlister SP, Storey C, McKinnon WR, Kovacic S Journal of Vacuum Science & Technology B, 20(5), 1961, 2002 |
| 6 |
Thermodynamics of GaNyAs1-y growth by metalorganic vapor phase epitaxy Gupta JA, McKinnon WR, Noad J, Coulas D, Williams RL, Driad R, McAlister SP Journal of Crystal Growth, 231(1-2), 48, 2001 |
| 7 |
Surface passivation of InGaAs for heterojunction bipolar transistor applications Driad R, McKinnon WR, Lu ZH, McAlister SP, Poole PJ, Charbonneau S Journal of Vacuum Science & Technology A, 18(2), 697, 2000 |
| 8 |
Oxygen plasma induced degradation in InGaAs/InP heterostructures Driad R, McKinnon WR, McAlister SP Journal of Vacuum Science & Technology B, 18(6), 2799, 2000 |
| 9 |
On the aggregation of tin in SnO composite glasses caused by the reversible reaction with lithium Courtney IA, McKinnon WR, Dahn JR Journal of the Electrochemical Society, 146(1), 59, 1999 |
| 10 |
Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors McKinnon WR, Driad R, McAlister SP, Renaud A, Wasilewski ZR Journal of Vacuum Science & Technology A, 16(2), 846, 1998 |