검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Experimental simulation of integrated optoelectronic sensors based on III nitrides Starikov D, Boney C, Medelci N, Um JW, Bensaoula A, Sanz ML, Fox GE Journal of Vacuum Science & Technology B, 20(5), 1815, 2002 |
| 2 |
Selective area growth of GaN on Si(111) by chemical beam epitaxy Kim E, Tempez A, Medelci N, Berishev I, Bensaoula A Journal of Vacuum Science & Technology A, 18(4), 1130, 2000 |
| 3 |
Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum Starikov D, Berishev I, Um JW, Badi N, Medelci N, Tempez A, Bensaoula A Journal of Vacuum Science & Technology B, 18(6), 2620, 2000 |
| 4 |
Metal-insulator-semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications Starikov D, Badi N, Berishev I, Medelci N, Kameli O, Sayhi M, Zomorrodian V, Bensaoula A Journal of Vacuum Science & Technology A, 17(4), 1235, 1999 |
| 5 |
Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl-2/Ar/N-2 plasmas Tempez A, Medelci N, Badi N, Berishev I, Starikov D, Bensaoula A Journal of Vacuum Science & Technology A, 17(4), 2209, 1999 |
| 6 |
Chemical Beam Epitaxy of InP-Based Solar-Cells and Tunnel-Junctions Vilela MF, Rossignol V, Bensaoula A, Medelci N, Freundlich A Journal of Vacuum Science & Technology B, 12(2), 1251, 1994 |