검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Comparison of interface state density characterization methods for SiO2/4H-SiC MOS diodes LaRoche JR, Kim J, Johnson JW, Luo B, Kang BS, Mehandru R, Irokawa Y, Pearton SJ, Chung G, Ren F Electrochemical and Solid State Letters, 7(2), G21, 2004 |
| 2 |
AlGaN/GaN HEMT based liquid sensors Mehandru R, Luo B, Kang BS, Kim J, Ren F, Pearton SJ, Pan CC, Chen GT, Chyi JI Solid-State Electronics, 48(2), 351, 2004 |
| 3 |
Small signal measurement of SC2O3AlGaN/GaN moshemts Luo B, Mehandru R, Kang BS, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie JK, Jenkins T, Sewell J, Via D, Crespo A Solid-State Electronics, 48(2), 355, 2004 |
| 4 |
Thermal simulations of high power, bulk GaN rectifiers Mehandru R, Kim S, Kim J, Ren F, Lothian JR, Pearton SJ, Park SS, Park YJ Solid-State Electronics, 47(6), 1037, 2003 |
| 5 |
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A Solid-State Electronics, 47(10), 1781, 2003 |
| 6 |
Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide Mehandru R, Gila BP, Kim J, Johnson JW, Lee KP, Luo B, Onstine AH, Abernathy CR, Pearton SJ, Ren F Electrochemical and Solid State Letters, 5(7), G51, 2002 |
| 7 |
High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes Kim JY, Gila BP, Mehandru R, Luo B, Onstine AH, Abernathy CR, Ren F, Allums KK, Dwivedi R, Forgarty TN, Wilkins R, Irokawa Y, Pearton SJ Electrochemical and Solid State Letters, 5(7), G57, 2002 |
| 8 |
Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide Kim J, Gila B, Mehandru R, Johnson JW, Shin JH, Lee KP, Luo B, Onstine A, Abernathy CR, Pearton SJ, Ren F Journal of the Electrochemical Society, 149(8), G482, 2002 |
| 9 |
Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch R, Gillespie J, Jenkins T, Sewell J, Via D, Crespo A, Irokawa Y Journal of the Electrochemical Society, 149(11), G613, 2002 |
| 10 |
Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design Mehandru R, Dang G, Kim S, Ren F, Hobson WS, Lopata J, Pearton SJ, Chang W, Shen H Solid-State Electronics, 46(5), 699, 2002 |