검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Depth distribution of lattice damage-related D-I and D-II defects after ion implantation and annealing of 6H-SiC Koshka Y, Melnychuck G Materials Science Forum, 389-3, 513, 2002 |
| 2 |
SiC defect density reduction by epitaxy on porous surfaces Saddow SE, Mynbaeva M, Choyke WJ, Devaty RP, Bai S, Melnychuck G, Koshka Y, Dmitriev V, Wood CEC Materials Science Forum, 353-356, 115, 2001 |
| 3 |
Lateral Epitaxial Overgrowth and pendeo epitaxy of 3C-SiC on Si substrates Saddow SE, Carter GE, Geil B, Zheleva T, Melnychuck G, Okhuysen ME, Mazzola MS, Vispute RD, Derenge M, Ervin M, Jones KA Materials Science Forum, 338-3, 245, 2000 |