검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Thermodynamic modelling of InAs/InP(001) growth towards quantum dots formation by metalorganic vapor phase epitaxy Hasan S, Merckling C, Pantouvaki M, Meersschaut J, Van Campenhout J, Vandervorst W Journal of Crystal Growth, 509, 133, 2019 |
| 2 |
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n plus InAs(Si)/p plus GaSb(Si) Esaki diode El Kazzi S, Alian A, Hsu B, Verhulst AS, Walke A, Favia P, Douhard B, Lu W, del Alamo JA, Collaert N, Merckling C Journal of Crystal Growth, 484, 86, 2018 |
| 3 |
Replacement fin processing for III-V on Si: From FinFets to nanowires Waldron N, Merckling C, Teugels L, Ong P, Sebaai F, Barla K, Collaert N, Thean VY Solid-State Electronics, 115, 81, 2016 |
| 4 |
Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions El Kazzi S, Smets Q, Ezzedini M, Rooyackers R, Verhulst A, Douhard B, Bender H, Collaert N, Merckling C, Heyns MM, Thean A Journal of Crystal Growth, 424, 62, 2015 |
| 5 |
Growth rate for the selective epitaxial growth of III-V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments Jiang S, Merckling C, Guo W, Waldron N, Caymax M, Vandervorst W, Seefeldt M, Heyns M Journal of Crystal Growth, 391, 59, 2014 |
| 6 |
Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation Loo R, Wang G, Orzali T, Waldron N, Merckling C, Leys MR, Richard O, Bender H, Eyben P, Vandervorst W, Caymax M Journal of the Electrochemical Society, 159(3), H260, 2012 |
| 7 |
In Situ HCl Etching of InP in Shallow-Trench-Isolated Structures Orzali T, Wang G, Waldron N, Merckling C, Richard O, Bender H, Wang WE, Caymax M Journal of the Electrochemical Society, 159(4), H455, 2012 |
| 8 |
Electrical characterization of InGaAs ultra-shallow junctions Petersen DH, Hansen O, Boggild P, Lin R, Nielsen PF, Lin D, Adelmann C, Alian A, Merckling C, Penaud J, Brammertz G, Goossens J, Vandervorst W, Clarysse T Journal of Vacuum Science & Technology B, 28(1), C1C41, 2010 |
| 9 |
Impact of a gamma-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties Becerra L, Merckling C, El-Kazzi M, Baboux N, Vilquin B, Saint-Girons G, Plossu C, Hollinger G Journal of Vacuum Science & Technology B, 27(1), 384, 2009 |
| 10 |
Capacitance-Voltage Characterization of GaAs-Oxide Interfaces Brammertz G, Lin HC, Martens K, Mercier D, Merckling C, Penaud J, Adelmann C, Sioncke S, Wang WE, Caymax M, Meuris M, Heyns M Journal of the Electrochemical Society, 155(12), H945, 2008 |