화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction
Sun YT, Messmer ER, Soderstrom D, Jahan D, Lourdudoss S
Journal of Crystal Growth, 225(1), 9, 2001
2 Dopant distribution in selectively regrown InP : Fe studied by time-resolved photoluminescence
Gaarder A, Marcinkevicius S, Messmer ER, Lourdudoss S
Journal of Crystal Growth, 226(4), 451, 2001
3 GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP : Fe regrowth
Barrios CA, Messmer ER, Holmgren M, Lourdudoss S
Electrochemical and Solid State Letters, 3(9), 439, 2000
4 In situ mesa etching and immediate regrowth in a HVPE reactor for buried heterostructure device fabrication
Messmer ER, Lindstrom T, Lourdudoss S
Journal of Crystal Growth, 210(4), 600, 2000
5 Analysis of regrowth evolution around VCSEL type mesas
Messmer ER, Lourdudoss S
Journal of Crystal Growth, 219(3), 185, 2000
6 Properties of semi-insulating GaAs : Fe grown by hydride vapor phase epitaxy
Messmer ER, Soderstrom D, Hult P, Marcinkevicius S, Lourdudoss S, Look DC
Journal of the Electrochemical Society, 147(8), 3109, 2000