검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Two step growth of high quality long n-GaN:Si nanowires using mu-GaN seed on Si(111) by metalorganic chemical vapor deposition Kim MH, Park JH, Yoo HI, Kissinger S, Kim JS, Baek BJ, Lee CR Thin Solid Films, 548, 58, 2013 |
| 2 |
Effects of oxide buffer layers on the microstructure and electrical properties of PLZST 2/87/10/3 antiferroelectric thin films Hao XH, Zhai JW, Yue ZX, Zhou J, Yang JC, An SL Journal of Crystal Growth, 314(1), 151, 2011 |
| 3 |
Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells Zheng XH, Chen H, Yan ZB, Yu HB, Li DS, Han YJ, Huang Q, Zhou JM Journal of Crystal Growth, 257(3-4), 326, 2003 |
| 4 |
MOCVD precursors for Ta- and Hf-compound films Machida H, Hoshino A, Suzuki T, Ogura A, Ohshita Y Journal of Crystal Growth, 237, 586, 2002 |