검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Formation of plasma-polymerized superhydrophobic coating using an atmospheric-pressure plasma jet Hossain MM, Trinh QH, Nguyen DB, Sudhakaran MSP, Mok YS Thin Solid Films, 675, 34, 2019 |
| 2 |
C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition Yamamoto Y, Ueno N, Sakuraba M, Murota J, Mai A, Tillack B Thin Solid Films, 602, 24, 2016 |
| 3 |
Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 2. Surface morphology and properties of deposited a-SiC:H films Wrobel AM, Walkiewicz-Pietrzykowska A, Uznanski P Thin Solid Films, 564, 232, 2014 |
| 4 |
Preparation, purification, and characterization of aminopropyl-functionalized silica sol Palmai M, Nagy LN, Mihaly J, Varga Z, Tarkanyi G, Mizsei R, Szigyarto IC, Kiss T, Kremmer T, Bota A Journal of Colloid and Interface Science, 390, 34, 2013 |
| 5 |
Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si : C : N films Blaszczyk-Lezak I, Wrobel AM, Kivitorma MPM, Vayrynen U, Tracz A Applied Surface Science, 253(17), 7211, 2007 |
| 6 |
Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanes Shinohara M, Kimura Y, Shoji D, Niwano M Applied Surface Science, 175, 591, 2001 |
| 7 |
Adsorption and decomposition of methylsilanes on Si(100) Shinohara M, Maehama T, Niwano M Applied Surface Science, 162, 161, 2000 |
| 8 |
Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction Ichikawa A, Hirose Y, Ikeda T, Noda T, Fujiu M, Takatsuka T, Moriya A, Sakuraba M, Matsuura T, Murota J Thin Solid Films, 369(1-2), 167, 2000 |
| 9 |
Near-stoichiometric silicon carbide from a poly(methylsilylene)/tetra-allylsilane mixture Gozzi MF, Goncalves MD, Yoshida IVP Journal of Materials Science, 34(1), 155, 1999 |
| 10 |
Carbon incorporation in SiGeC alloys grown by ultrahigh vacuum chemical vapor deposition Mocuta AC, Greve DW Journal of Vacuum Science & Technology A, 17(4), 1239, 1999 |