| 1 |
Electronic properties and defect levels induced by group III substitution-interstitial complexes in Ge
Igumbor E, Dongho-Nguimdo GM, Mapasha RE, Meyer WE
Journal of Materials Science, 54(15), 10798, 2019 |
| 2 |
Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique
Ahmed MAM, Meyer WE, Nel JM
Materials Research Bulletin, 115, 12, 2019 |
| 3 |
Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes
Auret FD, Coelho SMM, Myburg G, van Rensburg PJJ, Meyer WE
Thin Solid Films, 518(9), 2485, 2010 |
| 4 |
A "conjugal" consanguineous family of butadiynediyl-derived complexes: Synthesis and electronic ground states of neutral, radical cationic, and dicationic iron/rhenium C-4 species
Paul F, Meyer WE, Toupet L, Jiao HJ, Gladysz JA, Lapinte C
Journal of the American Chemical Society, 122(39), 9405, 2000 |
| 5 |
Summary of Schottky barrier height data on epitaxially grown n-and p-GaAs
Myburg G, Auret FD, Meyer WE, Louw CW, van Staden MJ
Thin Solid Films, 325(1-2), 181, 1998 |
| 6 |
Fermi-Level Pinning by Various Metal Schottky Contacts on (100)-OMVPE-Grown N-GaAs
Myburg G, Auret FD, Meyer WE, Burger H
Thin Solid Films, 249(1), 95, 1994 |
