검색결과 : 26건
| No. | Article |
|---|---|
| 1 |
Design and site-directed immobilization of single-chain Fv antibody to polystyrene latex beads via material-binding peptides and application to latex turbidimetric assay Kumada Y, Miyamura Y, Tanibata R, Takahashi K, Ogasawara S, Gondaira F, Horiuchi J Journal of Bioscience and Bioengineering, 131(1), 84, 2021 |
| 2 |
In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals Miyamura Y, Harada H, Liu X, Nakano S, Nishizawa S, Kakimoto K Journal of Crystal Growth, 507, 154, 2019 |
| 3 |
3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon Han XF, Liu X, Nakano S, Harada H, Miyamura Y, Kakimoto K Journal of Crystal Growth, 483, 269, 2018 |
| 4 |
Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals? Miyamura Y, Harada H, Nakano S, Nishizawa S, Kakimoto K Journal of Crystal Growth, 489, 1, 2018 |
| 5 |
Effect of oxygen on dislocation multiplication in silicon crystals Fukushima W, Harada H, Miyamura Y, Imai M, Nakano S, Kakimoto K Journal of Crystal Growth, 486, 45, 2018 |
| 6 |
Relationship between carbon concentration and carrier lifetime in CZ-Si crystals Miyamura Y, Harada H, Nakano S, Nishizawa S, Kakimoto K Journal of Crystal Growth, 486, 56, 2018 |
| 7 |
Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth Liu X, Harada H, Miyamura Y, Han XF, Nakano S, Nishizawa S, Kakimoto K Journal of Crystal Growth, 499, 8, 2018 |
| 8 |
Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations Gao B, Nakano S, Harada H, Miyamura Y, Kakimoto K Journal of Crystal Growth, 474, 121, 2017 |
| 9 |
Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells Nakano S, Gao B, Jiptner K, Harada H, Miyamura Y, Sekiguchi T, Fukuzawa M, Kakimoto K Journal of Crystal Growth, 474, 130, 2017 |
| 10 |
Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon Gao B, Jiptner K, Nakano S, Harada H, Miyamura Y, Sekiguchi T, Kakimoto K Journal of Crystal Growth, 411, 49, 2015 |