검색결과 : 33건
| No. | Article |
|---|---|
| 1 |
Thermodynamic Imbalance, Surface Energy, and Segregation Reveal the True Origin of Nanotube Synthesis Mohammad SN Advanced Materials, 24(9), 1262, 2012 |
| 2 |
General theoretical model for the vapor-phase growth and growth rate of semiconductor nanowires Mohammad SN Journal of Vacuum Science & Technology B, 28(2), 329, 2010 |
| 3 |
Mobility-diffusivity relationship for semiconductor nanowires Khan A, Mohammad SN Journal of Vacuum Science & Technology B, 26(1), 23, 2008 |
| 4 |
Interface states mediated reverse leakage through metal/AlxGa1-xN/GaN Schottky diodes Lu CZ, Zhang XL, Xie XS, Feng SW, Diagne I, Khan A, Mohammad SN Journal of Vacuum Science & Technology B, 26(6), 1987, 2008 |
| 5 |
Investigation of the oxide-assisted growth mechanism for nanowire growth and a model for this mechanism Mohammad SN Journal of Vacuum Science & Technology B, 26(6), 1993, 2008 |
| 6 |
Simple model for dielectrophoretic alignment of gallium nitride nanowires Motayed A, He MQ, Davydov AV, Melngailis J, Mohammad SN Journal of Vacuum Science & Technology B, 25(1), 120, 2007 |
| 7 |
Novelty and versatility of self-catalytic nanowire growth: A case study with InN nanowires He MQ, Mohammad SN Journal of Vacuum Science & Technology B, 25(3), 940, 2007 |
| 8 |
Structural characteristics of single-crystal nanowires grown by self-catalytic chemical vapor deposition method He MQ, Mohammad SN Journal of Vacuum Science & Technology B, 25(6), 1909, 2007 |
| 9 |
Ion-implanted edge termination for GaN Schottky diode rectifiers Mohammad SN, Eddy CR, Kub F Journal of Vacuum Science & Technology B, 24(1), 178, 2006 |
| 10 |
Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method Alam J, Bathe R, Vispute RD, Zavada JM, Litton CW, Iliadis AA, Mohammad SN Journal of Vacuum Science & Technology B, 22(2), 624, 2004 |