검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Defect reduction processes in heteroepitaxial non-polar a-plane GaN films Hao R, Kappers MJ, Moram MA, Humphreys CJ Journal of Crystal Growth, 337(1), 81, 2011 |
| 2 |
Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire Kappers MJ, Moram MA, Rao DVS, McAleese C, Humphreys CJ Journal of Crystal Growth, 312(3), 363, 2010 |
| 3 |
The effects of annealing on non-polar (1 1 (2)over-bar 0) a-plane GaN films Hao R, Zhu T, Haberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ, Moram MA Journal of Crystal Growth, 312(23), 3536, 2010 |
| 4 |
The Spatial Distribution of Threading Dislocations in Gallium Nitride Films Moram MA, Oliver RA, Kappers M, Humphreys CJ Advanced Materials, 21(38-39), 3941, 2009 |
| 5 |
Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ, Campion RP Journal of Crystal Growth, 311(7), 2054, 2009 |
| 6 |
Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers Moram MA, Johnston CF, Kappers MJ, Humphreys CJ Journal of Crystal Growth, 311(12), 3239, 2009 |
| 7 |
Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire Johnston CF, Kappers MJ, Moram MA, Hollander J, Humphreys CJ Journal of Crystal Growth, 311(12), 3295, 2009 |
| 8 |
Growth of epitaxial thin films of scandium nitride on 100-oriented silicon Moram MA, Novikov SV, Kent AJ, Norenberg C, Foxon CT, Humphreys CJ Journal of Crystal Growth, 310(11), 2746, 2008 |
| 9 |
The effect of oxygen incorporation in sputtered scandium nitride films Moram MA, Barber ZH, Humphreys CJ Thin Solid Films, 516(23), 8569, 2008 |
| 10 |
Growth of low dislocation density GaN using transition metal nitride masking layers Moram MA, Kappers MJ, Barber ZH, Humphreys CJ Journal of Crystal Growth, 298, 268, 2007 |