검색결과 : 6건
No. | Article |
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1 |
Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs Zoccal LB, Diniz JA, Doi I, Swart JW, Daltrini AM, Moshkalyov SA Journal of Vacuum Science & Technology B, 24(4), 1762, 2006 |
2 |
Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures Reyes-Betanzo C, Moshkalyov SA, Ramos ACS, Swart JW Journal of Vacuum Science & Technology A, 22(4), 1513, 2004 |
3 |
Study of conditions for anisotropic plasma etching of tungsten and tungsten nitride using SF6/Ar gas mixtures Reyes-Betanzo C, Moshkalyov SA, Ramos AC, Diniz JA, Swart JW Journal of the Electrochemical Society, 149(3), G179, 2002 |
4 |
Diagnostic of rf discharge plasma by Thomson scattering with gated intensified charge coupled device detectors Moshkalyov SA, Thompson C, Morrow T, Graham WG Journal of Vacuum Science & Technology A, 18(4), 1395, 2000 |
5 |
Spatially resolved optical emission study of sputtering in reactive plasmas Moshkalyov SA, Machida M, Campos DO, Dulkin A Journal of Vacuum Science & Technology A, 16(2), 514, 1998 |
6 |
Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in N-2/Ar/SiH4 Moshkalyov SA, Diniz JA, Swart JW, Tatsch PJ, Machida M Journal of Vacuum Science & Technology B, 15(6), 2682, 1997 |