화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs
Zoccal LB, Diniz JA, Doi I, Swart JW, Daltrini AM, Moshkalyov SA
Journal of Vacuum Science & Technology B, 24(4), 1762, 2006
2 Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures
Reyes-Betanzo C, Moshkalyov SA, Ramos ACS, Swart JW
Journal of Vacuum Science & Technology A, 22(4), 1513, 2004
3 Study of conditions for anisotropic plasma etching of tungsten and tungsten nitride using SF6/Ar gas mixtures
Reyes-Betanzo C, Moshkalyov SA, Ramos AC, Diniz JA, Swart JW
Journal of the Electrochemical Society, 149(3), G179, 2002
4 Diagnostic of rf discharge plasma by Thomson scattering with gated intensified charge coupled device detectors
Moshkalyov SA, Thompson C, Morrow T, Graham WG
Journal of Vacuum Science & Technology A, 18(4), 1395, 2000
5 Spatially resolved optical emission study of sputtering in reactive plasmas
Moshkalyov SA, Machida M, Campos DO, Dulkin A
Journal of Vacuum Science & Technology A, 16(2), 514, 1998
6 Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in N-2/Ar/SiH4
Moshkalyov SA, Diniz JA, Swart JW, Tatsch PJ, Machida M
Journal of Vacuum Science & Technology B, 15(6), 2682, 1997