| 1 |
Effect on optical, structural and electrical properties by the AlGaN/AlGaN multi quantum wells with different well and barrier thicknesses
Kim T, So B, Lee J, Nam O
Thin Solid Films, 680, 31, 2019 |
| 2 |
The Effect of the number of InGaN/GaN pairs on the photoelectrochemical properties of InGaN/GaN multi quantum wells
Bae H, Park JB, Fujii K, Lee HJ, Lee SH, Ryu SW, Lee JK, Ha JS
Applied Surface Science, 401, 348, 2017 |
| 3 |
Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
Wecker T, Jostmeier T, Rieger T, Neumann E, Pawlis A, Betz M, Reuter D, As DJ
Journal of Crystal Growth, 477, 149, 2017 |
| 4 |
Investigation of Mn incorporation in fifteen-period InGaAs/GaAs quantum well system
Yoon IT, Lee S, Shon Y, Kwon Y, Park CS, Lee CJ, Kang TW
Current Applied Physics, 14(8), 1063, 2014 |
| 5 |
Temperature dependence of InGaN/GaN multiple quantum well based high efficiency solar cell
Asgari A, Khalili K
Solar Energy Materials and Solar Cells, 95(11), 3124, 2011 |
| 6 |
A SiGe/Si multiple quantum well avalanche photodetector
Sun PH, Chang ST, Chen YC, Lin HC
Solid-State Electronics, 54(10), 1216, 2010 |
| 7 |
Thermal effect of multi-quantum barriers within InGaN/GaN multi-quantum well light-emitting diodes
Lee JC, Wu YF
Thin Solid Films, 518(24), 7437, 2010 |
| 8 |
Using thin-Al films to boost the quantum efficiency of SiGe/Si multi-quantum well avalanche photodiodes
Hwang JD, Wang CL
Thin Solid Films, 516(10), 3328, 2008 |
| 9 |
InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts
Su SH, Hou CC, Yokoyama M, Chen SM
Solid-State Electronics, 49(12), 1905, 2005 |
| 10 |
Short-circuit current enhancement in Bragg stack multi-quantum-well solar cells for multi-junction space cell applications
Bushnell DB, Ekins-Daukes NJ, Barnham KWJ, Connolly JP, Roberts JS, Hill G, Airey R, Mazzer M
Solar Energy Materials and Solar Cells, 75(1-2), 299, 2003 |
