| 1 |
C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition
Yamamoto Y, Ueno N, Sakuraba M, Murota J, Mai A, Tillack B
Thin Solid Films, 602, 24, 2016 |
| 2 |
Arsenic atomic layer doping in Si using AsH3
Yamamoto Y, Kurps R, Murota J, Tillack B
Solid-State Electronics, 110, 29, 2015 |
| 3 |
Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H-2 and Ar environment
Minami K, Moriya A, Yuasa K, Maeda K, Yamada M, Kunii Y, Niwano M, Murota J
Solid-State Electronics, 110, 40, 2015 |
| 4 |
Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4-B2H6-H-2 gas mixture without substrate heating
Abe Y, Sakuraba M, Murota J
Thin Solid Films, 557, 10, 2014 |
| 5 |
Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition
Yamamoto Y, Heinemann B, Murota J, Tillack B
Thin Solid Films, 557, 14, 2014 |
| 6 |
Epitaxial growth of Si-1 (-) Ge-x(x) alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating
Ueno N, Sakuraba M, Murota J, Sato S
Thin Solid Films, 557, 31, 2014 |
| 7 |
Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source
Luong TKP, Ghrib A, Dau MT, Zrir MA, Stoffel M, Le Thanh V, Daineche R, Le TG, Heresanu V, Abbes O, Petit M, El Kurdi M, Boucaud P, Rinnert H, Murota J
Thin Solid Films, 557, 70, 2014 |
| 8 |
Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode
Kawashima T, Sakuraba M, Murota J
Thin Solid Films, 557, 302, 2014 |
| 9 |
Phosphorus atomic layer doping in Ge using RPCVD
Yamamoto Y, Kurps R, Mai C, Costina I, Murota J, Tillack B
Solid-State Electronics, 83, 25, 2013 |
| 10 |
Behavior of N atoms after thermal nitridation of Si1-xGex surface
Kawashima T, Sakuraba M, Tillack B, Murota J
Thin Solid Films, 520(8), 3392, 2012 |
