검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Selective area growth and stencil lithography for in situ fabricated quantum devices Schuffelgen P, Rosenbach D, Li C, Schmitt TW, Schleenvoigt M, Jalil AR, Schmitt S, Kolzer J, Wang M, Bennemann B, Parlak U, Kibkalo L, Trellenkamp S, Grap T, Meertens D, Luysberg M, Mussler G, Berenschot E, Tas N, Golubov AA, Brinkman A, Schapers T, Grutzmacher D Nature Nanotechnology, 14(9), 825, 2019 |
| 2 |
Exploiting topological matter for Majorana physics and devices Schuffelgen P, Schmitt T, Schleenvoigt M, Rosenbach D, Perla P, Jalil AR, Mussler G, Lepsa M, Schapers T, Grutzmacher D Solid-State Electronics, 155, 99, 2019 |
| 3 |
Signatures of induced superconductivity in AlOx-capped topological heterostructures Schuffelgen P, Rosenbach D, Pang Y, Kampmeier J, Luysberg M, Kibkalo L, Mussler G, Veldhuis D, Brinkman A, Lu L, Schapers T, Grutzmacher D Solid-State Electronics, 155, 111, 2019 |
| 4 |
Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films Schuffelgen P, Rosenbach D, Neumann E, Stehno MP, Lanius M, Zhao JL, Wang M, Sheehan B, Schmidt M, Gao B, Brinkman A, Mussler G, Schapers T, Grutzmacher D Journal of Crystal Growth, 477, 183, 2017 |
| 5 |
Selective area growth of Bi2Te3 and Sb2Te3 topological insulator thin films Kampmeier J, Weyrich C, Lanius M, Schall M, Neumann E, Mussler G, Schapers T, Grutzmacher D Journal of Crystal Growth, 443, 38, 2016 |
| 6 |
Topography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy Lanius M, Kampmeier J, Kolling S, Mussler G, Koenraad PM, Grutzmacher D Journal of Crystal Growth, 453, 158, 2016 |
| 7 |
Metal organic vapor phase epitaxy of hexagonal Ge-Sb-Te (GST) Schuck M, Riess S, Schreiber M, Mussler G, Grutzmacher D, Hardtdegen H Journal of Crystal Growth, 420, 37, 2015 |
| 8 |
SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications Wirths S, Buca D, Ikonic Z, Harrison P, Tiedemann AT, Hollander B, Stoica T, Mussler G, Breuer U, Hartmann JM, Grutzmacher D, Mantl S Thin Solid Films, 557, 183, 2014 |
| 9 |
Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy Winden A, Mikulics M, Stoica T, von der Ahe M, Mussler G, Haab A, Grutzmacher D, Hardtdegen H Journal of Crystal Growth, 370, 336, 2013 |
| 10 |
Low temperature RPCVD epitaxial growth of Si1-xGex using Si2H6 and Ge2H6 Wirths S, Buca D, Tiedemann AT, Bernardy P, Hollander B, Stoica T, Mussler G, Breuer U, Mantl S Solid-State Electronics, 83, 2, 2013 |