1 |
Highly c-axis oriented AlN layers grown on c-plane sapphire substrates by radio-frequency sputter epitaxy at 1080 degrees C Mutsukura N, Shinoda H Thin Solid Films, 520(13), 4237, 2012 |
2 |
Structural properties of GaN and related alloys grown by radio-frequency magnetron sputter epitaxy Shinoda H, Mutsukura N Thin Solid Films, 516(10), 2837, 2008 |
3 |
Structural and optical properties of InN films prepared by radio frequency magnetron sputtering Shinoda H, Mutsukura N Thin Solid Films, 503(1-2), 8, 2006 |
4 |
Synthesis of epitaxial GaN single-crystalline film by ultra high vacuum r.f. magnetron sputtering method Daigo Y, Mutsukura N Thin Solid Films, 483(1-2), 38, 2005 |
5 |
Deposition of diamond-like carbon film in a closed-space CH4 RF plasma Mutsukura N, Handa Y Plasma Chemistry and Plasma Processing, 22(4), 607, 2002 |
6 |
Deposition of diamondlike carbon film and mass spectrometry measurement in CH4/N-2 RF plasma Mutsukura N Plasma Chemistry and Plasma Processing, 21(2), 265, 2001 |
7 |
Deposition of diamond-like carbon film and mass spectrometry measurement in CH4/O-2 RF plasma Tanaka K, Mutsukura N Plasma Chemistry and Plasma Processing, 19(2), 217, 1999 |
8 |
Infrared absorption spectroscopy measurements of amorphous CNx films prepared in CH4/N-2 r.f. discharge Mutsukura N, Akita K Thin Solid Films, 349(1-2), 115, 1999 |
9 |
Temperature-Dependence of A-C-H Film Deposition in a CH4 Radio-Frequency Plasma Mutsukura N, Saitoh K Journal of Vacuum Science & Technology A, 14(4), 2666, 1996 |
10 |
Diagnostics and Control of Radiofrequency Glow-Discharge Mutsukura N, Fukasawa Y, Machi Y, Kubota T Journal of Vacuum Science & Technology A, 12(6), 3126, 1994 |