| 1 |
Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes
Auret FD, Coelho SMM, Myburg G, van Rensburg PJJ, Meyer WE
Thin Solid Films, 518(9), 2485, 2010 |
| 2 |
Electrical characterization and annealing behavior of defect introduced in Si during sputter etching in an Ar plasma
Deenapanray PNK, Auret FD, Myburg G
Journal of Vacuum Science & Technology B, 16(4), 1873, 1998 |
| 3 |
Summary of Schottky barrier height data on epitaxially grown n-and p-GaAs
Myburg G, Auret FD, Meyer WE, Louw CW, van Staden MJ
Thin Solid Films, 325(1-2), 181, 1998 |
| 4 |
Comparative-Study of Surface-Properties of Austenitic Stainless-Steels in Sulfuric and Hydrochloric-Acid Solutions
Varga K, Baradlai P, Barnard WO, Myburg G, Halmos P, Potgieter JH
Electrochimica Acta, 42(1), 25, 1997 |
| 5 |
Corrosion Behavior of Duplex Stainless-Steels Containing Minor Ruthenium Additions in Reducing Acid-Media
Potgieter JH, Barnard WO, Myburg G, Varga K, Baradlai P, Tomcsanyi L
Journal of Applied Electrochemistry, 26(11), 1103, 1996 |
| 6 |
Fermi-Level Pinning by Various Metal Schottky Contacts on (100)-OMVPE-Grown N-GaAs
Myburg G, Auret FD, Meyer WE, Burger H
Thin Solid Films, 249(1), 95, 1994 |
