검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
4H-SiC MOS structures fabricated from RTCVD Si layers oxidized in diluted N2O Perez-Tomas A, Tournier D, Godignon P, Mestres N, Millan J Materials Science Forum, 483, 673, 2005 |
| 2 |
Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiC Xu JP, Lai PT, Chan CL Solid-State Electronics, 47(8), 1397, 2003 |