| 1 |
Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior
Baek S, Lee J, Park I, Baek RH, Lee JS
Solid-State Electronics, 140, 18, 2018 |
| 2 |
On the turn-around phenomenon in n-MOS transistors under NBTI conditions
Benabdelmoumene A, Djezzar B, Chenouf A, Tahi H, Zatout B, Kechouane M
Solid-State Electronics, 121, 34, 2016 |
| 3 |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
Lu YH, Chang TC, Ho SH, Chen CE, Tsai JY, Liu KJ, Liu XW, Lin CY, Tseng TY, Cheng O, Huang CT, Yen WT
Thin Solid Films, 620, 43, 2016 |
| 4 |
Highly stable hafnium-tin-zinc oxide thin film transistors with stacked bilayer active layers
Han DS, Park JH, Kang MS, Choi DK, Park JW
Current Applied Physics, 15(2), 94, 2015 |
| 5 |
On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
Djezzar B, Tahi H, Benabdelmoumene A, Chenouf A, Goudjil M, Kribes Y
Solid-State Electronics, 106, 54, 2015 |
| 6 |
Compact model for parametric instability under arbitrary stress waveform
Alagi F, Rossetti M, Stella R, Vigano E, Raynaud P
Solid-State Electronics, 113, 92, 2015 |
| 7 |
Bias temperature instability comparison of CMOS LTPS-TFTs with HfO2 gate dielectric
Ma WCY, Huang CY
Solid-State Electronics, 114, 115, 2015 |
| 8 |
Steroid hormones are novel nucleoside transport inhibitors by competition with nucleosides for their transporters
Kaneko M, Hakuno F, Kamei H, Yamanaka D, Chida K, Minami S, Coe IR, Takahashi SI
Biochemical and Biophysical Research Communications, 443(2), 505, 2014 |
| 9 |
A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits
Esqueda IS, Barnaby HJ
Solid-State Electronics, 91, 81, 2014 |
| 10 |
Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics
Kim H, Roh Y
Solid-State Electronics, 91, 127, 2014 |
