| 1 |
Phase separation within NiSiN coatings during reactive HiPIMS discharges: A new pathway to grow NixSi nanocrystals composites at low temperature
Keraudy J, Boyd RD, Shimizu T, Helmersson U, Jouan PY
Applied Surface Science, 454, 148, 2018 |
| 2 |
Solid-phase diffusion controlled growth of nickel silicide nanowires for supercapacitor electrode
Ramly MM, Omar FS, Rohaizad A, Aspanut Z, Rahman SA, Goh BT
Applied Surface Science, 456, 515, 2018 |
| 3 |
Effects of substrate temperature on the growth, structural and optical properties of NiSi/SiC core-shell nanowires
Hamzan NB, Nordin FNB, Rahman SA, Huang NM, Goh BT
Applied Surface Science, 343, 70, 2015 |
| 4 |
The effects of grain boundary scattering on electrical resistivity of Ag/NiSi suicide films formed on silicon substrate at 500 degrees C by RTA
Utlu G, Artunc N
Applied Surface Science, 310, 248, 2014 |
| 5 |
Microstructure, crystallization kinetics and recording characteristics of Si/NiSi bilayer for write-once blu-ray disk
Ou SL, Chen SC, Lin YC, Kuo TY
Thin Solid Films, 570, 486, 2014 |
| 6 |
High-density NiSi nanocrystals embedded in Al2O3/SiO2 double-barrier for robust retention of nonvolatile memory
Ren JL, Li B, Zheng JG, Liu JL
Solid-State Electronics, 67(1), 23, 2012 |
| 7 |
20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain
Knoll L, Zhao QT, Luptak R, Trellenkamp S, Bourdelle KK, Mantl S
Solid-State Electronics, 71, 88, 2012 |
| 8 |
Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer
Cheng SL, Zhan CY, Lee SW, Chen H
Applied Surface Science, 257(20), 8712, 2011 |
| 9 |
NiSi 접촉과 Cu 플러그/Ti 확산방지층의 동시 형성 연구
배규식
Korean Journal of Materials Research, 20(6), 338, 2010 |
| 10 |
Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
Urban C, Sandow C, Zhao QT, Knoch J, Lenk S, Mantl S
Solid-State Electronics, 54(2), 185, 2010 |
