화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer
Na KD, Kim JH, Park TJ, Song J, Hwang CS, Choi JH
Thin Solid Films, 518(18), 5326, 2010
2 First-principles study on the formation of a vacancy in Ge under biaxial compressive strain
Choi JH, Na KD, Lee SC, Hwang CS
Thin Solid Films, 518(22), 6373, 2010
3 Role of Carbon on Resistivity and Structure of HfCxNy Films Grown by Low Temperature MOCVD
Jang JH, Park TJ, Kim JH, Na KD, Park WY, Kim M, Hwang CS
Journal of the Electrochemical Society, 156(1), H76, 2009
4 Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection
Kim JH, Park TJ, Cho M, Jang JH, Seo M, Na KD, Hwang CS, Won JY
Journal of the Electrochemical Society, 156(5), G48, 2009
5 Influence of phase separation on electrical properties of ALD Hf-silicate films with various Si concentrations
Park TJ, Kim JH, Jang JH, Na KD, Hwang CS, Yoo JH
Electrochemical and Solid State Letters, 11(5), H121, 2008
6 Comparison of electrical properties between HfO2 films on strained and relaxed Si1-xGex substrates
Park TJ, Kim JH, Jang JH, Na KD, Seo M, Hwang CS, Won JY
Electrochemical and Solid State Letters, 10(12), G97, 2007