검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Functionalized inclined-GaN based nanoneedles Kim KH, Lee KS, Hong HN, Yang DS, Ryu WH, Nam OH, Kim YC Journal of Industrial and Engineering Chemistry, 59, 184, 2018 |
| 2 |
Improved thermal stability of GaN blue laser diode by Ti/Pt/Au, W/Au and Cu bonding layers Jang T, Kwak JS, Sung YJ, Choi KK, Nam OH, Park Y Thin Solid Films, 516(6), 1093, 2008 |
| 3 |
Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire Lee SN, Paek HS, Ryu HY, Son JK, Sakong T, Jang T, Choi KK, Sung YJ, Kim YH, Kim HK, Chae SH, Ha KH, Chae JH, Kim KS, Kwak JS, Nam OH, Park Y Journal of Crystal Growth, 298, 695, 2007 |
| 4 |
Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire Lee SN, Paek HS, Son JK, Sakong T, Nam OH, Park Y Journal of Crystal Growth, 307(2), 358, 2007 |
| 5 |
Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode Lee SN, Jang T, Son JK, Paek HS, Sakong T, Yoon E, Nam OH, Park Y Journal of Crystal Growth, 287(2), 554, 2006 |
| 6 |
New contact resistivity characterization method for non-uniform ohmic contacts on GaN Jang T, Kwak JS, Nam OH, Park Y Solid-State Electronics, 50(3), 433, 2006 |
| 7 |
GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact Song JO, Leem DS, Kim SH, Kwak JS, Nam OH, Park Y, Seong TY Solid-State Electronics, 48(9), 1597, 2004 |
| 8 |
Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties Kim HJ, Kwon SY, Yim S, Na H, Kee B, Yoon E, Kim J, Park SH, Jeon H, Kim S, Seo JH, Park K, Seon MS, Sone C, Nam OH, Park Y Current Applied Physics, 3(4), 351, 2003 |
| 9 |
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions Danielsson E, Zetterling CM, Ostling M, Linthicum K, Thomson DB, Nam OH, Davis RF Solid-State Electronics, 46(6), 827, 2002 |
| 10 |
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures Zheleva TS, Nam OH, Ashmawi WM, Griffin JD, Davis RF Journal of Crystal Growth, 222(4), 706, 2001 |