화학공학소재연구정보센터
검색결과 : 22건
No. Article
1 InN nanocolumns grown by molecular beam epitaxy and their luminescence properties
Wang K, Araki T, Yamaguchi T, Chen YT, Yoon E, Nanishi Y
Journal of Crystal Growth, 430, 93, 2015
2 Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition
Park S, Jung J, Seok C, Shin KW, Park SH, Nanishi Y, Park Y, Yoon E
Journal of Crystal Growth, 401, 518, 2014
3 Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry
Schooche S, Hofmann T, Darakchieva V, Wang X, Yoshikawa A, Wang K, Araki T, Nanishi Y, Schubert M
Thin Solid Films, 571, 384, 2014
4 Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation
Yamaguchi T, Uematsu N, Araki T, Honda T, Yoon E, Nanishi Y
Journal of Crystal Growth, 377, 123, 2013
5 Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing
Shin IS, Lee D, Lee KH, You H, Moon DY, Park J, Nanishi Y, Yoon E
Thin Solid Films, 546, 118, 2013
6 The low leakage current in floating body GaN metal oxide semiconductor field effect transistors
Fujishima T, Otake H, Nanishi Y, Ohta H
Solid-State Electronics, 54(12), 1561, 2010
7 In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth
Suzuki A, Bungi Y, Araki T, Nanishi Y, Mori Y, Yamamoto H, Harima H
Journal of Crystal Growth, 311(10), 2776, 2009
8 Growth and characterization of N-polar and In-polar InN films by RF-MBE
Yamaguchi T, Muto D, Araki T, Nanishi Y
Journal of Crystal Growth, 311(10), 2780, 2009
9 Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN
Na H, Takado S, Sawada S, Kurouchi M, Akagi T, Naoi H, Araki T, Nanishi Y
Journal of Crystal Growth, 300(1), 177, 2007
10 Growth of InN nanocolumns by RF-MBE
Nishikawa S, Nakao Y, Naoi H, Araki T, Na H, Nanishi Y
Journal of Crystal Growth, 301, 490, 2007