검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study Amoroso SM, Gerrer L, Markov S, Adamu-Lema F, Asenov A Solid-State Electronics, 84, 120, 2013 |
| 2 |
A TCAD simulation study of impact of strain engineering on nanoscale strained Si NMOSFETs with a silicon-carbon alloy stressor Chang ST, Wang WC, Lee CC, Huang J Thin Solid Films, 518(5), 1595, 2009 |
| 3 |
Self-consistent 2D compact modeling of nanoscale bulk MOSFETs Kloes A, Weidemann M Solid-State Electronics, 51(5), 739, 2007 |
| 4 |
Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations Kranti A, Armstrong GA Solid-State Electronics, 50(3), 437, 2006 |