검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes Mok KRC, Qi L, Vlooswijk AHG, Nanver LK Solid-State Electronics, 111, 210, 2015 |
| 2 |
Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p(+)n junctions Sakic A, Qi L, Scholtes TLM, van der Cingel J, Nanver LK Solid-State Electronics, 84, 65, 2013 |
| 3 |
PureGaB p(+)n Ge diodes grown in large windows to Si with a sub-300 nm transition region Sammak A, Qi L, de Boer WB, Nanver LK Solid-State Electronics, 74, 126, 2012 |
| 4 |
Integration of MOSFETs with SiGe dots as stressor material Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E Solid-State Electronics, 60(1), 75, 2011 |
| 5 |
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection Sakic A, Nanver LK, Scholtes TLM, Heerkens CTH, Knezevic T, van Veen G, Kooijman K, Vogelsang P Solid-State Electronics, 65-66, 38, 2011 |
| 6 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis Russo S, La Spina L, d'Alessandro V, Rinaldi N, Nanver LK Solid-State Electronics, 54(8), 745, 2010 |
| 7 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II - Dynamic analysis Russo S, La Spina L, d'Alessandro V, Rinaldi N, Nanver LK Solid-State Electronics, 54(8), 754, 2010 |
| 8 |
Ultra-high aspect-ratio FinFET technology Jovanovic V, Suligoj T, Poljak M, Civale Y, Nanver LK Solid-State Electronics, 54(9), 870, 2010 |
| 9 |
C-V profiling of ultra-shallow junctions using step-like background profiles Popadic M, Milovanovic V, Xu CQ, Sarubbi F, Nanver LK Solid-State Electronics, 54(9), 890, 2010 |
| 10 |
X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility Hrauda N, Zhang JJ, Stangl J, Rehman-Khan A, Bauer G, Stoffel M, Schmidt OG, Jovanovich V, Nanver LK Journal of Vacuum Science & Technology B, 27(2), 912, 2009 |