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| No. | Article |
|---|---|
| 1 |
Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer Liao PY, Chang TC, Hsieh TY, Tsai MY, Chen BW, Chu AK, Chou CH, Chang JF Thin Solid Films, 603, 359, 2016 |