| 1 |
How deposition parameters control growth dynamics of nc-Si deposited by hot-wire chemical vapor deposition
Moutinho HR, To B, Jiang CS, Xu Y, Nelson BP, Teplin CW, Jones KM, Perkins J, Al-Jassim MM
Journal of Vacuum Science & Technology A, 24(1), 95, 2006 |
| 2 |
In-situ studies of the growth of amorphous and nanocrystalline silicon using real time spectroscopic ellipsometry
Levi DH, Nelson BP, Iwanizcko E, Teplin CW
Thin Solid Films, 455-56, 679, 2004 |
| 3 |
In situ studies of the amorphous to microcrystalline transition of hot-wire chemical vapor deposition Si : H films using real-time spectroscopic ellipsometry
Levi DH, Nelson BP, Perkins JD, Moutinho HR
Journal of Vacuum Science & Technology A, 21(4), 1545, 2003 |
| 4 |
Studying early time HWCVD growth of a-Si : H by real time spectroscopic ellipsometry
Levi D, Nelson BP, Reedy R
Thin Solid Films, 430(1-2), 20, 2003 |
| 5 |
Effects of dilution ratio and seed layer on the crystallinity of microcrystalline silicon thin films deposited by hot-wire chemical vapor deposition
Moutinho HR, Jiang CS, Perkins J, Xu Y, Nelson BP, Jones KM, Romero MJ, Al-Jassim MM
Thin Solid Films, 430(1-2), 135, 2003 |
| 6 |
Small-angle neutron scattering studies of hot-wire CVD a-Si : H
Williamson DL, Marr DWM, Iwaniczko E, Nelson BP
Thin Solid Films, 430(1-2), 192, 2003 |
| 7 |
Improving narrow bandgap a-SiGe : H alloys grown by hot-wire chemical vapor deposition
Xu YQ, Nelson BP, Gedvilas LM, Reedy RC
Thin Solid Films, 430(1-2), 197, 2003 |
| 8 |
High-deposition rate a-Si : H n-i-p solar cells grown by HWCVD
Nelson BP, Iwaniczko E, Mahan AH, Wang Q, Xu YQ, Crandall RS, Branz HM
Thin Solid Films, 395(1-2), 292, 2001 |
| 9 |
Control of surface and zeta potentials on nanoporous TiO2 films by potential-determining and specifically adsorbed ions
Nelson BP, Candal R, Corn RM, Anderson MA
Langmuir, 16(15), 6094, 2000 |
| 10 |
Mesoporous metal oxide semiconductor-clad waveguides
Miller LW, Tejedor MI, Nelson BP, Anderson MA
Journal of Physical Chemistry B, 103(40), 8490, 1999 |
