화학공학소재연구정보센터
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No. Article
1 pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption
Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R
Journal of Colloid and Interface Science, 583, 331, 2021
2 pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption
Wang JA, Zhang X, Wang C, Li H, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R
Journal of Colloid and Interface Science, 556, 680, 2019
3 XPS/NEXAFS spectroscopic and conductance studies of glycine on AlGaN/GaN transistor devices
Myers M, Khir FLM, Home MA, Mennell C, Gillbanks J, Tadich A, Baker MV, Nener BD, Parish G
Applied Surface Science, 435, 23, 2018
4 Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
Khir FLM, Myers M, Podolska A, Sanders TM, Baker MV, Nener BD, Parish G
Applied Surface Science, 314, 850, 2014
5 Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors
Kocan M, Recht F, Umana-Membreno GA, Kilburn MR, Nener BD, Mishra UK, Parish G
Solid-State Electronics, 56(1), 56, 2011
6 Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching
Baharin A, Pinto RS, Mishra UK, Nener BD, Parish G
Thin Solid Films, 519(11), 3686, 2011
7 Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes
Parish G, Kennedy RA, Umana-Membreno GA, Nener BD
Solid-State Electronics, 52(2), 171, 2008
8 Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes
Pulfrey DL, Parish G, Wee D, Nener BD
Solid-State Electronics, 49(12), 1969, 2005
9 Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion
Rais MH, Musca CA, Antoszewski J, Dell JM, Nener BD, Faraone L
Journal of Crystal Growth, 214, 1106, 2000
10 Growth and XPS Characterization of Anodic Telluride Films on Hg1-xCdxTe
Jain M, Nener BD, Warrington N, Baker MV, Robins JL, Faraone L
Journal of the Electrochemical Society, 142(7), 2480, 1995