검색결과 : 2건
No. | Article |
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1 |
Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers Madia O, Nguyen APD, Thoan NH, Afanas'ev V, Stesmans A, Souriau L, Slotte J, Tuomisto F Applied Surface Science, 291, 11, 2014 |
2 |
Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance Nguyen APD, Stesmans A, Afanas'ev VV, Lieten RR, Borghs G Thin Solid Films, 518(9), 2361, 2010 |