화학공학소재연구정보센터
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No. Article
1 Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers
Madia O, Nguyen APD, Thoan NH, Afanas'ev V, Stesmans A, Souriau L, Slotte J, Tuomisto F
Applied Surface Science, 291, 11, 2014
2 Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance
Nguyen APD, Stesmans A, Afanas'ev VV, Lieten RR, Borghs G
Thin Solid Films, 518(9), 2361, 2010