검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Advantage of plasma-less deposition in Cat-CVD to the performance of electronic devices Matsumura H, Hasegawa T, Nishizaki S, Ohdaira K Thin Solid Films, 519(14), 4568, 2011 |
| 2 |
Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films Endo Y, Fujiwara T, Ohdaira K, Nishizaki S, Nishioka K, Matsumura H Thin Solid Films, 518(17), 5003, 2010 |
| 3 |
Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing Ohdaira K, Shiba K, Takemoto H, Fujiwara T, Endo Y, Nishizaki S, Jang YR, Matsumura H Thin Solid Films, 517(12), 3472, 2009 |
| 4 |
Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods Nishizaki S, Ohdaira K, Matsumura H Thin Solid Films, 517(12), 3581, 2009 |
| 5 |
All hot wire CVD TFTs with high deposition rate silicon nitride (3 nm/s) Schropp REI, Nishizaki S, Houweling ZS, Verlaan V, van der Werf CHM, Matsumura H Solid-State Electronics, 52(3), 427, 2008 |
| 6 |
Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films Ohdaira K, Abe Y, Fukuda M, Nishizaki S, Usami N, Nakajima K, Karasawa T, Torikai T, Matsumura H Thin Solid Films, 516(5), 600, 2008 |
| 7 |
Superconductivity in a Layered Perovskite Without Copper Maeno Y, Hashimoto H, Yoshida K, Nishizaki S, Fujita T, Bednorz JG, Lichtenberg F Nature, 372(6506), 532, 1994 |