화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Substrate preparation and low-temperature boron doped silicon growth on wafer-scale charge-coupled devices by molecular beam epitaxy
Calawa SD, Burke BE, Nitishin PM, Loomis AH, Gregory JA, Lind TA
Journal of Vacuum Science & Technology B, 20(3), 1170, 2002
2 Effects of Low-Temperature-Grown GaAs and AlGaAs on the Current of a Metal-Insulator-Semiconductor Structure
Chen CL, Mahoney LJ, Nichols KB, Manfra MJ, Brown ER, Nitishin PM, Molvar KM, Gramstorff BF, Murphy RA
Journal of Vacuum Science & Technology B, 14(3), 1745, 1996
3 Bright-Field Analysis of Field-Emission Cones Using High-Resolution Transmission Electron-Microscopy and the Effect of Structural-Properties on Current Stability
Goodhue WD, Nitishin PM, Harris CT, Bozler CO, Rathman DD, Johnson GD, Hollis MA
Journal of Vacuum Science & Technology B, 12(2), 693, 1994