검색결과 : 34건
| No. | Article |
|---|---|
| 1 |
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R Journal of Colloid and Interface Science, 583, 331, 2021 |
| 2 |
Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM Applied Surface Science, 317, 1022, 2014 |
| 3 |
The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE Kumar M, Rajpalke MK, Roul B, Bhat TN, Sinha N, Kalghatgi AT, Krupanidhi SB Applied Surface Science, 257(6), 2107, 2011 |
| 4 |
Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor Phase Epitaxy Tao YB, Yu TJ, Yang ZY, Ling D, Wang Y, Chen ZZ, Yang ZJ, Zhang GY Journal of Crystal Growth, 315(1), 183, 2011 |
| 5 |
Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth Hu YL, Kraemer S, Fini PT, Speck JS Journal of Crystal Growth, 331(1), 49, 2011 |
| 6 |
Investigation of GaN-based light-emitting diodes using double photonic crystal patterns Huang HW, Lai FI, Kuo SY, Huang JK, Lee KY Solid-State Electronics, 56(1), 31, 2011 |
| 7 |
Investigation on the thermal behavior of microwave GaN HEMTs Crupi G, Avolio G, Raffo A, Barmuta P, Schreurs DMMP, Caddemi A, Vannini G Solid-State Electronics, 64(1), 28, 2011 |
| 8 |
High temperature chemical and physical changes of the HVPE-prepared GaN semiconductor Drygas M, Bucko MM, Olejniczak Z, Grzegory I, Janik JF Materials Chemistry and Physics, 122(2-3), 537, 2010 |
| 9 |
On the piezoelectric coupling constant of epitaxial Mg-doped GaN Xu X, Woods RC Solid-State Electronics, 54(7), 680, 2010 |
| 10 |
Vacancy profiles and clustering in light-ion-implanted GaN and ZnO Tuomisto F Applied Surface Science, 255(1), 54, 2008 |