검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE Matta S, Brault J, Korytov M, Vuong TQP, Chaix C, Al Khalfioui M, Vennegues P, Massies J, Gil B Journal of Crystal Growth, 499, 40, 2018 |
| 2 |
t-C8B2N2: A potential superhard material Wang D, Shi R, Gan LH Chemical Physics Letters, 669, 80, 2017 |
| 3 |
Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets Feng W, Kuryatkov VV, Nikishin SA, Holtz M Journal of Crystal Growth, 312(10), 1717, 2010 |
| 4 |
Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure Huang HH, Chao CL, Chi TW, Chang YL, Liu PC, Tu LW, Tsay JD, Kuo HC, Cheng SJ, Lee WI Journal of Crystal Growth, 311(10), 3029, 2009 |
| 5 |
Electrical and optical properties of MOVPE InN doped with mg using CP2Mg Yamamoto A, Nagai Y, Niwa H, Miwa H, Hashimoto A Journal of Crystal Growth, 298, 399, 2007 |