검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers Lee KH, Chang PC, Chang SJ, Su YK, Wang YC, Yu CL, Kuo CH Thin Solid Films, 518(10), 2839, 2010 |
| 2 |
Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD Zheng XH, Feng ZH, Wang YT, Zheng WL, Jia QJ, Jiang XM, Yang H, Liang JW Journal of Crystal Growth, 242(1-2), 124, 2002 |
| 3 |
Mechanism of zeolite a nanocrystal growth from colloids at room temperature Mintova S, Olson NH, Valtchev V, Bein T Science, 283(5404), 958, 1999 |
| 4 |
Residual stress in diamond films: origins and modelling Michler J, Mermoux M, von Kaenel Y, Haouni A, Lucazeau G, Blank E Thin Solid Films, 357(2), 189, 1999 |
| 5 |
In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001) Goldfarb I, Owen JHG, Bowler DR, Goringe CM, Hayden PT, Miki K, Pettifor DG, Briggs GAD Journal of Vacuum Science & Technology A, 16(3), 1938, 1998 |
| 6 |
3-Dimensional Random-Walk Simulations of Diffusion-Controlled Electrode Processes .1. A Hemisphere, Disc and Growing Hemisphere Nagy G, Sugimoto Y, Denuault G Journal of Electroanalytical Chemistry, 433(1-2), 167, 1997 |