화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Push the flash floating gate memories toward the future low energy application
Della Marca V, Just G, Regnier A, Ogier JL, Simola R, Niel S, Postel-Pellerin J, Lalande F, Masoero L, Molas G
Solid-State Electronics, 79, 210, 2013
2 Data retention under gate stress on a NVM array
Djenadi R, Micolau G, Postel-Pellerin J, Chiquet P, Laffont R, Ogier JL, Regnier A, Lalande F, Melkonian J
Solid-State Electronics, 78, 80, 2012
3 Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test
Aziza H, Portal JM, Plantier J, Reliaud C, Regnier A, Ogier JL
Solid-State Electronics, 78, 151, 2012
4 An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test
Le Roux C, Lopez L, Firiti A, Ogier JL, Lalande F, Laffont R, Micolau G
Solid-State Electronics, 52(10), 1550, 2008