검색결과 : 4건
No. | Article |
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1 |
Push the flash floating gate memories toward the future low energy application Della Marca V, Just G, Regnier A, Ogier JL, Simola R, Niel S, Postel-Pellerin J, Lalande F, Masoero L, Molas G Solid-State Electronics, 79, 210, 2013 |
2 |
Data retention under gate stress on a NVM array Djenadi R, Micolau G, Postel-Pellerin J, Chiquet P, Laffont R, Ogier JL, Regnier A, Lalande F, Melkonian J Solid-State Electronics, 78, 80, 2012 |
3 |
Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test Aziza H, Portal JM, Plantier J, Reliaud C, Regnier A, Ogier JL Solid-State Electronics, 78, 151, 2012 |
4 |
An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test Le Roux C, Lopez L, Firiti A, Ogier JL, Lalande F, Laffont R, Micolau G Solid-State Electronics, 52(10), 1550, 2008 |